TK12E60U Datasheet, Toshiba Semiconductor

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (V.

* Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.36 Ω (typ.) .